LPT-7 Diode-Pumped Solid-State Laser Demonstrator
Specifications
| Semiconductor Laser | |
| CW Output Power | ≤ 500 mW |
| Polarization | TE |
| Center Wavelength | 808 ± 10 nm |
| Operation Temperature Range | 10 ~ 40 °C |
| Driving Current | 0 ~ 500 mA |
| Nd: YVO4 Crystal | |
| Nd Doping Concentration | 0.1 ~ 3 atm% |
| Dimension | 3×3×1 mm |
| Flatness | < λ/10 @632.8 nm |
| Coating | AR@1064 nm, R<0.1%; 808=”" t=”">90% |
| KTP Crystal | |
| Transmissive Wavelength Range | 0.35 ~ 4.5 µm |
| Electro-Optic Coefficient | r33=36 pm/V |
| Dimension | 2×2×5 mm |
| Output Mirror | |
| Diameter | Φ 6 mm |
| Radius of Curvature | 50 mm |
| He-Ne Alignment Laser | ≤ 1 mW @632.8 nm |
| IR Viewing Card | Spectral response range: 0.7 ~ 1.6 µm |
| Laser Safety Goggles | OD= 4+ for 808 nm and 1064 nm |
| Optical Power Meter | 2 μW ~ 200 mW, 6 scales |
PARTS LIST
|
No. |
Description |
Parameter |
Qty |
|
1 |
Optical Rail | with base and dust cover, He-Ne laser power supply is installed inside base |
1 |
|
2 |
He-Ne Laser Holder | with carrier |
1 |
|
3 |
Alignment Aperture | f1 mm holewith carrier |
1 |
|
4 |
Filter | f10 mm aperturewith carrier |
1 |
|
5 |
Output Mirror | BK7, f6 mm R =50 mmwith 4-axis adjustable holder and carrier |
1 |
|
6 |
KTP Crystal | 2×2×5 mmwith 2-axis adjustable holder and carrier |
1 |
|
7 |
Nd:YVO4 Crystal | 3×3×1 mmwith 2-axis adjustable holder and carrier |
1 |
|
8 |
808nm LD (laser diode) | ≤ 500 mWwith 4-axis adjustable holder and carrier |
1 |
|
9 |
Detector Head Holder | with carrier |
1 |
|
10 |
Infrared Viewing Card | 750 ~1600 nm |
1 |
|
11 |
He-Ne Laser Tube | 1.5mW@632.8 nm |
1 |
|
12 |
Optical Power Meter | 2 μW~200 mW (6 ranges) |
1 |
|
13 |
Detector Head | with cover and post |
1 |
|
14 |
LD Current Controller | 0 ~ 500 mA |
1 |
|
15 |
Power Cord |
3 |
|
|
16 |
Instruction Manual | V1.0 |
1 |
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