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China Wholesale V-I Characteristics Suppliers – LEEM-8 Magnetoresistive Effect Experimental Apparatus – Labor

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China Wholesale V-I Characteristics Suppliers – LEEM-8 Magnetoresistive Effect Experimental Apparatus – Labor Detail:

Note: oscilloscope not included

The device is simple in structure and rich in content. It uses two kinds of sensors: GaAs Hall sensor to measure the magnetic induction intensity, and to study the resistance of InSb magnetoresistance sensor under different magnetic induction intensity. Students can observe the Hall effect and magnetoresistance effect of semiconductor, which are characterized by research and design experiments.

Experiments

1. Study the resistance change of an InSb sensor vs the applied magnetic field intensity; find the empirical formula.

2. Plot InSb sensor resistance vs magnetic field intensity.

3. Study the AC characteristics of an InSb sensor under a weak magnetic field (frequency-doubling effect).

 

Specifications

Description Specifications
Power supply of magneto-resistance sensor 0-3 mA adjustable
Digital voltmeter range 0-1.999 V resolution 1 mV
Digital milli-Teslameter range 0-199.9 mT, resolution 0.1 mT

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China Wholesale V-I Characteristics Suppliers –  LEEM-8 Magnetoresistive Effect Experimental Apparatus – Labor detail pictures


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We will make just about every exertion for being excellent and perfect, and speed up our actions for standing during the rank of worldwide top-grade and high-tech enterprises for China Wholesale V-I Characteristics Suppliers – LEEM-8 Magnetoresistive Effect Experimental Apparatus – Labor , The product will supply to all over the world, such as: France, Estonia, Manila, All the imported machines effectively control and guarantee the machining precision for the products. Besides, we have a group of high-quality management personnels and professionals, who make the high-quality products and have the ability to develop new products to expand our market home and abroad. We sincerely expect customers come for a blooming business for both of us.
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